Thermo-fluid simulation for the thermal design of the IGBT module in the power conversion system
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- 作者：Chang-Woo Hana ; b ; Seung-Boong Jeonga ; Myung-Do Ohc ; mdoh@uos.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Airflow rate ; Insulated-gate bipolar transistor (IGBT) ; Junction temperature ; Porous media model ; Power conversion system (PCS) ; Thermo-fluid simulation model
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：59
- 期：Complete
- 页码：64-72
- 全文大小：1914 K
文摘
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The proposed simulation model can calculate the airflow rate of the heat sink block.
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The T–Q characteristic curve can predict the junction temperature of the IGBT module.
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The porous media model was adopted in the simulation model of the system level.
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The differences of results were within the average 4.0% margin of error.
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The simulation model can predict the system response due to the change of design conditions.