A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors
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- 作者：M.N. Bharathia ; N. Pushpab ; N.H. Vinayakprasannaa ; A.P. Gnana Prakasha ; gnanaprakash@physics.uni-mysore.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Bipolar junction transistor ; Higher LET ions ; Current gain degradation ; Isochronal annealing
- 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- 出版年：2016
- 出版时间：21 June 2016
- 年：2016
- 卷：822
- 期：Complete
- 页码：34-42
- 全文大小：2810 K
文摘
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The effects of 80 MeV Au14+ and 150 MeV Ag12+ ions on Si NPN transistors are studied.
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Lower LET Results are compared with lower LET ion irradiation results.
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Ionization and displacement damages of ions in transistors are simulated using SRIM.
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Higher LET ions degrade dc characteristics more when compared to lower LET ions.
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Isochronal annealing study was conducted on the irradiated transistors.
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After annealing, the recovery in hFE and other electrical parameters are significant.