Influence of base carrier lifetime on the characteristics of 4H-SiC BJTs

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• 作者：Yuan Lei^a ; Song Qingwen^a ; ^b ; ^{qwsong@xidian.edu.cn} ; Tang Xiaoyan^a ; Zhang Yimeng^a ; Yang Shuai^a ; Zhang Yimen^a ; Guo Lixin^c ; Xiao Li^d ; Wang Liangyong^d ; Zhang Yuming^a
• 关键词：Bipolar junction transistor ; Lifetime ; Switching characteristic ; Charge storage
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：127-133
• 全文大小：1755 K
• 卷排序：102

文摘

The base electron lifetime in 4H-SiC bipolar junction transistors is optimized. The TCAD simulation results show that there is tradeoff between the current gain (β) and the turn-off time (tF). The influence of the base drive current is also discussed.