Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties

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• 作者：Wanjoo Maeng^a ; Seung-Hwan Lee^b ; Jung-Dae Kwon^c ; ^{jdkwon@kims.re.kr" class="auth_mail" title="E-mail the corresponding author} ; Jozeph Park^d ; ¹ ; ^{jozeph.park@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Jin-Seong Park^b ; ^{jsparklime@hanyang.ac.kr" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Copper oxide ; Atomic layer deposition ; Ozone ; Thin film transistors ; p-type ; Annealing
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：42
• 期：4
• 页码：5517-5522
• 全文大小：700 K

文摘

Copper oxide (CuO_x) films were grown at a relatively low temperature (100 °C) by atomic layer deposition (ALD). Hexafluoroacetyl-acetonateCu(I)(3,3-Dimethyl-1-butene) ((hfac)Cu-(I)(DMB)) and ozone (O₃) were used as the copper precursor and oxidant, respectively. It is shown that stable phases of CuO_x are obtained through rapid thermal annealing (RTA) in air. After annealing at various temperatures (200–500 °C), different p-type band structures and electron binding information are obtained. X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE) studies indicate that the major copper oxidation state changes from 1⁺ to 2⁺ during thermal treatment. Thin film transistors (TFTs) incorporating the ALD-grown CuO_x semiconductors are evaluated, and an unusually high p-type device performance is observed, with a field effect mobility of 5.6 cm²/V s after annealing at 300 °C.