The initial oxidation behaviors of uranium nitride UN_x (x = 0, 0.23, 0.68, 1.66) films

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• 作者：Lei Lu^a ; Fangfang Li^a ; Yin Hu^b ; Hong Xiao^a ; Bin Bai^a ; Yanzhi Zhang^b ; Lizhu Luo^b ; Jing Liu^b ; ^{jingliu@mail.ustc.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Kezhao Liu^a ; ^{kezhaoliu2001@sohu.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Uranium nitride ; AES ; Oxidation behavior
• 刊名：Journal of Nuclear Materials
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：480
• 期：Complete
• 页码：189-194
• 全文大小：1452 K

文摘

The initial oxidation behaviors of uranium nitride films with different N/U ratios have been focused in the present work. Uranium nitride films with different nitrogen content, UN_x (x = 0, 0.23, 0.68, 1.66), have been prepared on the Si substrate by radio frequency magnetron sputtering method. The experimental results showed that the UN_x (x = 0, 0.23, 0.68, 1.66) films were fine and dense. The initial oxidation processes of uranium nitride films were investigated in an ultra-high vacuum chamber of Auger electron spectroscopy. After 105 L oxygen exposure, the oxide layer of UO₂ were formed on the surface of U, and UN_0.23, UN_0.68 films formed UO₂ with little UN_xO_y, while the UN_1.66 film generated UN_xO_y oxide layer. UN_1.66 film exhibited the thinnest oxide layer and provided the best considerable protection against oxygen attack. Also, the AES transition lines of UN_xO_y were identified for the first time.