ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition

详细信息    查看全文

• 作者：Kyung Yong Ko^a ; ¹Author Vitae ; Hyemin Kang^a ; ¹Author Vitae ; Jusang Park^aAuthor Vitae ; Byung-Wook Min^aAuthor Vitae ; Hee Sung Lee^bAuthor Vitae ; Seongil Im^bAuthor Vitae ; Ji Yeon Kang^cAuthor Vitae ; Jae-Min Myoung^cAuthor Vitae ; Jae-Hun Jung^dAuthor Vitae ; Soo-Hyun Kim^dAuthor Vitae ; Hyungjun Kim^a ; ^{hyungjun@yonsei.ac.kr" class="auth_mail}Author Vitae
• 关键词：UV photo-detecting diode ; Nitrogen-doped ZnO ; Homojunction ; Core&ndash ; shell nanorod ; Atomic layer deposition
• 刊名：Sensors and Actuators A: Physical
• 出版年：1 April, 2014
• 年：2014
• 卷：210
• 期：Complete
• 页码：197-204
• 全文大小：2193 K

文摘

We investigated the device properties of ZnO homojunction core-shell nanorods (NRs) ultraviolet (UV) photo-detecting diodes depending on fabrication process. ZnO homojunction core-shell NRs fabrication was realized by atomic layer deposition (ALD) of highly conformal ZnO shell with high concentration of nitrogen (HNZO) over hydrothermally synthesized n-ZnO NRs. ALD of HNZO was carried out using diethyl zinc (DEZ) and diluted ammonium hydroxide (NH₄OH) as a Zn precursor and reactant/nitrogen source, respectively. On the electrical analysis, HNZO films is found to be weak n-type or ambiguous and, finally this HNZO attributed the rectifying property at the junction with n-type ZnO NRs. ZnO planar device was also fabricated as a comparative reference. Comparative study between core-shell and planar device has shown that the responsivity of the core-shell device was turned out to be about two times higher than that of planar device. Photoluminescence (PL) intensity of core-shell device was significantly reduced compared to that of planar device for overall region of wavelength, which was attributed to rapid separation of photo-generated carriers. The carrier transport mechanism in core-shell NR device is discussed based on band bending phenomenon.