Effects of voltage stress on the single event upset (SEU) response of 65 nm flip flop
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- 作者：C.T. Chuaa ; H.G. Ongc ; K. Sanchezb ; P. Perdub ; c ; C.L. Gana ; c ; clgan@ntu.edu.sg" class="auth_mail" title="E-mail the corresponding author
- 关键词：Voltage stress ; Single event upset ; Flip flop ; 65 ; nm ; Pulsed laser ; Radiation effect ; Reliability ; Aging ; Cross section curve ; SEU mapping
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：64
- 期：Complete
- 页码：199-203
- 全文大小：863 K
文摘
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Laser mappings of the flip flop chain revealed that the SEU sensitive regions increased with laser energy.
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Clear shift in the cross-section curves after voltage stress of 130 h.
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Comparisons of data revealed at least a doubled increase in sensitive areas after voltage stress.
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Increase in SEU sensitivity is related to electrical parameter changes.