The contributions of composition and strain to the phonon shift in alloys

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• 作者：Shaojian Su^a ; Wei Wang^a ; Buwen Cheng ; ^a ; ^{cbw@semi.ac.cn} ; Weixuan Hu^a ; Guangze Zhang^a ; Chunlai Xue^a ; Yuhua Zuo^a ; Qiming Wang^a
• 关键词：A. Semiconductors ; D. Raman scattering
• 刊名：Solid State Communications
• 出版年：2011
• 出版时间：April 2011
• 年：2011
• 卷：151
• 期：8
• 页码：647-650
• 全文大小：337 K

文摘

Strained and relaxed Ge_1−xSn_x alloys grown on Si(001) substrates by molecular beam epitaxy have been studied by Raman scattering. The compositional dependence of the Ge–Ge Raman mode has been measured to be for the strained alloys while it is for the relaxed ones, which are in good agreement with theoretical predictions. The results clearly show that, with the increase of Sn concentration, the Ge–Ge phonon frequency decreases much more slowly in the strained alloys than in the relaxed ones.