Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2
详细信息 查看全文
- 作者：Hyuk-Min Kwonb ; 1 ; Do-Kywn Kima ; 1 ; Sung-Kyu Limc ; Hae-Chul Hwangc ; Seung Woo Sona ; Jung Ho Parka ; Won-Sang Parka ; Jin Su Kima ; Chan-Soo Shinb ; Won-Kyu Parkb ; Jung Hee Leea ; Taewoo Kimd ; twkim78@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Dae-Hyun Kima ; dae-hyun.kim@ee.knu.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Reliability ; InGaAs ; MOSFET ; High-k ; Logic
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：121
- 期：Complete
- 页码：16-19
- 全文大小：951 K
文摘
- •
We performed the instability investigation on InGaAs quantum-well InGaAs MOSFETs.
- •
The InGaAs MOSFET with Al2O3/HfO2 exhibits better electrostatic integrity, however, it shows worse reliability and frequency dispersion behavior than one with Al2O3.
- •
At cryogenic temperature, the device with Al2O3/HfO2 induces worse hysteresis behavior than one with Al2O3.