Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells
详细信息 查看全文
- 作者：Qi Mua ; Mingsheng Xub ; Xuesong Wanga ; Qiang Wanga ; Yuanjie Lvc ; Zhihong Fengc ; Xiangang Xud ; Ziwu Jia ; jiziwu@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Photoluminescence ; Localization effect ; Strain release ; Quasi-superlattice underlying layer
- 刊名：Physica E: Low-dimensional Systems and Nanostructures
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：76
- 期：Complete
- 页码：1-5
- 全文大小：1120 K
文摘
- •
Optical properties of InGaN/GaN MQWs were studied by PL and Raman measurements.
- •
Inserting a QSL underlying buffer layer can release strain in the MQWs.
- •
The strain release reduces QCSE in the InGaN well layers.
- •
The strain release facilitates composition fluctuation of the InGaN well layers.
- •
The strain release enhances radiative recombination rate of the MQWs.