Growth of SiC single crystals on patterned seeds by a sublimation method
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- 作者：Xianglong Yang ; Xiufang Chen ; Yan Peng ; Xiangang Xu ; xxu@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xiaobo Hu ; xxu@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：A1. Threading dislocation density ; A2. Patterned seeds ; A2. Lateral growth ; B1. SiC
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 April 2016
- 年：2016
- 卷：439
- 期：Complete
- 页码：7-12
- 全文大小：1385 K
文摘
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The patterned seeds were used to improve the structural perfection of SiC crystals by PVT.
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Anisotropy in lateral growth rates was observed.
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The dependence of lateral growth rate on growth conditions was investigated.