Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals
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- 作者：Xuejian Xiea ; b ; Yan Penga ; b ; penny4964@163.com" class="auth_mail" title="E-mail the corresponding author ; Fusheng Zhanga ; b ; Rongkun Wanga ; b ; Xiufang Chena ; b ; Xiaobo Hua ; b ; xbhu@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xiangang Xua ; b
- 关键词：p-type SiC ; Anharmonic effect ; Raman spectra ; Phonon property
- 刊名：Journal of Alloys and Compounds
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：691
- 期：Complete
- 页码：1033-1039
- 全文大小：1555 K
文摘
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The Raman shift and linewidth of p-type 6H-SiC is analyzed by a theoretical model.
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The different physical mechanism of temperature-dependent of A1(LO) is discussed.
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The phonon lifetime is calculated and the decay mechanism is illustrated.
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The temperature and doping dependence of Raman intensity is discussed.