Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer
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- 作者：Xuancong Fan ; Huiqing Sun ; sunhq@scnu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xuna Li ; Hao Sun ; Cheng Zhang ; Zhuding Zhang ; Zhiyou Guo
- 关键词：Electron blocking layer ; Deep ultraviolet light-emitting diodes ; AlGaN
- 刊名：Superlattices and Microstructures
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：88
- 期：Complete
- 页码：467-473
- 全文大小：1812 K
文摘
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Four different EBL structure LEDs with different Al composition are compared in detail.
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EBL with graded Al component can enhance light output power and spontaneous emission.
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The relation of electrostatic field with band-bending is explained.
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Inverted-V-shaped EBL increases the efficiency of electron blocking and hole injection.