Effects of annealing ambience on ZnO:N films grown by MOCVD and the p-type doping mechanism of ZnO:N films investigated by XANES

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• 作者：Qingwei Li ; Jiming Bian ; Jingchang Sun ; Hongwei Liang ; Chongwen Zou ; Yinglan Sun ; Yingmin Luo
• 关键词：Thin films ; XPS ; XANES
• 刊名：Applied Surface Science
• 出版年：2010
• 出版时间：15 December 2010
• 年：2010
• 卷：257
• 期：5
• 页码：1634-1637
• 全文大小：492 K

文摘

ZnO:N thin films were deposited on sapphire substrate by metal organic chemical vapor deposition with NH₃ as N-doping sources. The reproducible p-type ZnO:N film with hole concentration of 10¹⁷ cm⁻³ was successfully achieved by subsequent in situ thermal annealing in N₂O plasma protective ambient, while only weak p-type ZnO:N film with remarkably lower hole concentration of 10¹⁵ cm⁻³ was obtained by annealing in O₂ ambient. To understand the mechanism of the p-type doping behavior of ZnO:N film, X-ray photoelectron spectroscopy (XPS) and soft X-ray absorption near-edge spectroscopy (XANES) measurements have been applied to investigate the local electronic structure and chemical states of nitrogen atoms in ZnO:N films.