Growth of ZnO crystal on sapphire and nitridated sapphire substrates at 1000 °C by halide vapor phase epitaxy

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• 作者：Naoki Yoshii ; Tetsuo Fujii ; Rui Masuda ; Shigetoshi Hosaka ; Akira Kamisawa ; Yoshinao Kumagai ; Akinori Koukitu
• 关键词：ZnO ; Crystal growth ; Crystal structure ; Surfaces ; Vapor phase epitaxy
• 刊名：Materials Letters
• 出版年：2010
• 出版时间：15 January 2010
• 年：2010
• 卷：64
• 期：1
• 页码：25-27
• 全文大小：213 K

文摘

Using a halide vapor phase epitaxy (HVPE) technique in which the starting materials are ZnCl₂ generated by the reaction between high purity Zn metal (7 N grade) and Cl₂ gas, and H₂O, ZnO crystals have been grown at a high temperature of 1000 °C on sapphire substrates with and without surface nitridation treatment. It was found that the nitridation treatment resulted in a change of the (112̅0) sapphire surface to a (0001) AlN structure, leading to two possible sets of orientations for (0001) ZnO crystals. In addition, the nitridation treatment leads to a smaller average ZnO grain size and a higher density of nuclei.