Direct observation of local atomic structure in arsenic implanted silicon

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• 作者：H. Yamazaki ; ^{hideyuki.yamazaki@toshiba.co.jp} ; M. Yoshiki ; R. Takaishi ; S. Takeno
• 关键词：Silicon ; Arsenic ; Ion implantation ; Synchrotron radiation ; EXAFS
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2012
• 出版时间：December, 2012
• 年：2012
• 卷：15
• 期：6
• 页码：707-712
• 全文大小：466 K

文摘

We have investigated the implantation fluence dependence of the local atomic structure around arsenic (As) dopant atoms in low-energy (10 keV) implanted crystalline silicon by extended X-ray absorption fine structure (EXAFS) spectroscopy performed using a high-brilliance synchrotron radiation beam from an in-vacuum undulator in a third-generation light source. To obtain complementary information on the structural properties, high-resolution transmission electron microscopy (HR-XTEM) and nanobeam electron diffraction (NBED) measurements were also performed. We present the first observation of the initial stages of lattice disorder in As-implanted Si.