High hydrogen sensitivity of vertically standing layered MoS2/Si heterojunctions
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- 作者：Lanzhong Haoa ; haolanzhong@upc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Yunjie Liua ; Wei Gaoa ; Yanmin Liua ; Zhide Hana ; Lianqing Yua ; Qingzhong Xuea ; xueqz@upc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Jun Zhub
- 关键词：MoS2 ; Thin films ; Heterojunctions ; Sensing ; ppm levels
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 October 2016
- 年：2016
- 卷：682
- 期：Complete
- 页码：29-34
- 全文大小：1295 K
文摘
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Vertically standing layered MoS2 thin films were deposited on Si substrates.
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The fabricated MoS2/Si sensors exhibited excellent sensing characteristics to H2.
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The detection resolution of the sensors reached a 1.0-ppm level.
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The sensing mechanisms were proposed by the determination of the band alignment.