Microwave power and simulation of S-band SiC MESFETs

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• 作者：Chen Gang ; Qin YuFei ; Bai Song ; Wu Peng ; Li ZheYang ; Chen Zheng ; P. Han
• 关键词：4H-SiC ; MESFET ; Simulation ; Microwave
• 刊名：Solid-State Electronics
• 出版年：2010
• 出版时间：April 2010
• 年：2010
• 卷：54
• 期：4
• 页码：353-356
• 全文大小：523 K

文摘

In this paper we report our research on DC and S parameter simulations and DC and RF characteristics experimental results of 4H–SiC MESFETs on a high purity semi-insulating substrate. 4H-SiC MESFETs were fabricated using home-grown epi structures. We designed our own devices process to fabricate n-channel 4H–SiC MESFETs with 200 μm gate periphery. At a frequency of 2 GHz and at 79 V drain voltage, the maximum output power density CW is measured to be 7.8 W/mm, with a gain of 11.9 dB, and power-added efficiency 40 % . The cut-off frequency (f_T) and the maximum oscillation frequency (f_max) is 8.7 GHz and 25.5 GHz, respectively. The simulation result of f_T and f_max is 11.4 GHz and 38.6 GHz, respectively.