Effect of Polymer Processing on the Performance of Poly(3-hexylthiophene)/ZnO Nanorod Photovoltaic Devices
详细信息    查看全文
文摘
Effective infiltration of the polymer into the nanostructured oxide is critical for optimizing the performanceof hybrid -conjugated polymer/nanostructured metal oxide semiconductor photovoltaic devices. Weinvestigated the effect of polymer processing parameters, solvent selection, and thermal annealing on poly(3-hexylthiophene) (P3HT)/ZnO nanorod photovoltaic devices and found that these play an important role inthe degree of polymer infiltration and the subsequent device performance. We demonstrate that usingdichlorobenzene as a solvent produced better performance devices than using chloroform. In addition, theinfiltration of P3HT into the ZnO nanorod array has been improved through annealing and subsequent slowcooling. Time-resolved microwave conductivity studies reveal an increase in the photoconductivity of thecomposite devices with annealing, resulting from changes in both the polymer and ZnO. The device performancewas shown to increase with enhanced infiltration, and the devices that had been slow cooled from melt at225 C demonstrated a VOC of 440 mV, a JSC of 1.33 mA/cm2, a fill factor of 48%, and a power conversionefficiency of 0.28%. In contrast to previously published results on P3HT infiltrated into mesoporous TiO2(Appl. Phys. Lett. 2003, 83, 3380), we found that the device performance improves with increasing amountof the polymer embedded in the ZnO arrays, through proper solvent selection and polymer processing.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700