A New Thermoelectric Material: CsBi4Te6
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- 作者：Duck-Young Chung ; Tim P. Hogan ; Melissa Rocci-Lane ; Paul Brazis ; John R. Ireland ; Carl R. Kannewurf ; Marina Bastea ; Ctirad Uher ; and Mercouri G. Kanatzidis
- 刊名：Journal of the American Chemical Society
- 出版年：2004
- 出版时间：May 26, 2004
- 年：2004
- 卷：126
- 期：20
- 页码：6414 - 6428
- 全文大小：687K
- 年卷期：v.126,no.20(May 26, 2004)
- ISSN：1520-5126
文摘
The highly anisotropic material CsBi4Te6 was prepared by the reaction of Cs/Bi2Te3 around 600
C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) Å, b = 4.4025(1)Å, c = 14.5118(3) Å, 
= 101.480(1), V = 3250.75(11) Å3, and Z = 8. The final R values are R1 = 0.0585and wR2 = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi4Te6] anioniclayers and Cs+ ions residing between the layers. The [Bi4Te6] layers are interconnected by Bi-Bi bonds ata distance of 3.2383(10) Å. This material is a narrow gap semiconductor. Optimization studies on thethermoelectric properties with a variety of doping agents show that the electrical properties of CsBi4Te6can be tuned to yield an optimized thermoelectric material which is promising for low-temperatureapplications. SbI3 doping resulted in p-type behavior and a maximum power factor of 51.5 
W/cm·K2 at184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 W/cm·K2 at 151 Kwas obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties,doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studieson n-type CsBi4Te6 and comparisons to those of p-type.
C. The compound crystallizes in the monoclinic space group C2/m with a = 51.9205(8) Å, b = 4.4025(1)Å, c = 14.5118(3) Å, = 101.480(1), V = 3250.75(11) Å3, and Z = 8. The final R values are R1 = 0.0585and wR2 = 0.1127 for all data. The compound has a 2-D structure composed of NaCl-type [Bi4Te6] anioniclayers and Cs+ ions residing between the layers. The [Bi4Te6] layers are interconnected by Bi-Bi bonds ata distance of 3.2383(10) Å. This material is a narrow gap semiconductor. Optimization studies on thethermoelectric properties with a variety of doping agents show that the electrical properties of CsBi4Te6can be tuned to yield an optimized thermoelectric material which is promising for low-temperatureapplications. SbI3 doping resulted in p-type behavior and a maximum power factor of 51.5 W/cm·K2 at184 K and the corresponding ZT of 0.82 at 225 K. The highest power factor of 59.8 W/cm·K2 at 151 Kwas obtained from 0.06% Sb-doped material. We report here the synthesis, physicochemical properties,doping characteristics, charge-transport properties, and thermal conductivity. Also presented are studieson n-type CsBi4Te6 and comparisons to those of p-type.