Tris(triisopropylsilyl)silane and the Generation of Bis(triisopropylsilyl)silylene
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- 作者：Peter P. Gaspar ; Alicia M. Beatty ; Tongqian Chen ; Tesfamichael Haile ; Deqing Lei ; William R. Winchester ; Janet Braddock-Wilking ; Nigam P. Rath ; Wim T. Klooster ; Thomas F. Koetzle ; Sax A. Mason ; and Al
- 刊名：Organometallics
- 出版年：1999
- 出版时间：September 13, 1999
- 年：1999
- 卷：18
- 期：19
- 页码：3921 - 3932
- 全文大小：329K
- 年卷期：v.18,no.19(September 13, 1999)
- ISSN：1520-6041
文摘
Tris(triisopropylsilyl)silane (iPr3Si)3SiH has been synthesized and studied by X-ray andneutron diffraction. It possesses an unusual structure in which the four silicon atoms arenearly coplanar, 
Si-Si-Si = 118.41(5)
. The Si-H distance is found to have a normalvalue of 1.506(2) Å. Thermal and room-temperature photochemical decomposition of (iPr3Si)3SiH leads to the elimination of iPr3SiH and the generation of bis(triisopropylsilyl)silylene,[(iPr3Si)2Si:]. Reactions of (iPr3Si)2Si: include precedented insertions into H-Si bonds andaddition to the 
-bonds of olefins, alkynes, and dienes. Despite theoretical predictions of atriplet ground state for [(iPr3Si)2Si:], stereospecific addition to cis- and trans-2-butene wasobserved.
Si-Si-Si = 118.41(5). The Si-H distance is found to have a normalvalue of 1.506(2) Å. Thermal and room-temperature photochemical decomposition of (iPr3Si)3SiH leads to the elimination of iPr3SiH and the generation of bis(triisopropylsilyl)silylene,[(iPr3Si)2Si:]. Reactions of (iPr3Si)2Si: include precedented insertions into H-Si bonds andaddition to the -bonds of olefins, alkynes, and dienes. Despite theoretical predictions of atriplet ground state for [(iPr3Si)2Si:], stereospecific addition to cis- and trans-2-butene wasobserved.