Atomic Layer Deposition of Tungsten(III) Oxide Thin Films from W2(NMe2)6 and Water: Precursor-Based Control of Oxidation State in the Thin Film Material

详细信息    查看全文

• 作者：Charles L. Dezelah IV ; Oussama M. El-Kadri ; Imre M. Szil&aacute ; gyi ; Joseph M. Campbell ; Kai Arstila ; Lauri Niinist&ouml ; Charles H. Winter
• 刊名：Journal of the American Chemical Society
• 出版年：2006
• 出版时间：August 2, 2006
• 年：2006
• 卷：128
• 期：30
• 页码：9638 - 9639
• 全文大小：35K
• 年卷期：v.128,no.30(August 2, 2006)
• ISSN：1520-5126

文摘

The atomic layer deposition of W₂O₃ films was demonstrated employing W₂(NMe₂)₆ and water as precursors with substrate temperatures between 140 and 240 mages/entities/deg.gif">C. At 180 mages/entities/deg.gif">C, surface saturative growth was achieved with W₂(NMe₂)₆ vapor pulse lengths of mages/entities/ge.gif">2 s. The growth rate was about 1.4 Å/cycle at substrate temperatures between 140 and 200 mages/entities/deg.gif">C. Growth rates of 1.60 and 2.10 Å/cycle were observed at 220 and 240 mages/entities/deg.gif">C, respectively. In a series of films deposited at 180 mages/entities/deg.gif">C, the film thicknesses varied linearly with the number of deposition cycles. Time-of-flight elastic recoil analyses demonstrated stoichiometric W₂O₃ films, with carbon, hydrogen, and nitrogen levels between 6.3 and 8.6, 11.9 and 14.2, and 4.6 and 5.0 at. %, respectively, at substrate temperatures of 160, 180, and 200 mages/entities/deg.gif">C. The as-deposited films were amorphous. Atomic force microscopy showed root-mean-square surface roughnesses of 0.7 and 0.9 nm for films deposited at 180 and 200 mages/entities/deg.gif">C, respectively. The resistivity of a film grown at 180 mages/entities/deg.gif">C was 8500 microhm cm.