Studies of Hot Photoluminescence in Plasmonically Coupled Silicon via Variable Energy Excitation and Temperature-Dependent Spectroscopy
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- 作者：Carlos O. Aspetti ; Chang-Hee Cho ; Rahul Agarwal ; Ritesh Agarwal
- 刊名：Nano Letters
- 出版年：2014
- 出版时间：September 10, 2014
- 年：2014
- 卷：14
- 期：9
- 页码：5413-5422
- 全文大小：533K
- ISSN：1530-6992
文摘
By integrating silicon nanowires (鈭?50 nm diameter, 20 渭m length) with an 惟-shaped plasmonic nanocavity, we are able to generate broadband visible luminescence, which is induced by high order hybrid nanocavity-surface plasmon modes. The nature of this super bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 to 2.708 eV) and finite difference time domain simulations. Furthermore, temperature-dependent photoluminescence spectroscopy shows that the observed emission corresponds to radiative recombination of unthermalized (hot) carriers as opposed to a resonant Raman process.