Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
详细信息 查看全文
- 作者：Liam Britnell ; Roman V. Gorbachev ; Rashid Jalil ; Branson D. Belle ; Fred Schedin ; Mikhail I. Katsnelson ; Laurence Eaves ; Sergey V. Morozov ; Alexander S. Mayorov ; Nuno M. R. Peres ; Antonio H. Castro Neto ; Jon Leist ; Andre K. Geim ; Leonid A. Ponomarenko ; Kostya S. Novoselov
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：March 14, 2012
- 年：2012
- 卷：12
- 期：3
- 页码：1707-1710
- 全文大小：247K
- 年卷期：v.12,no.3(March 14, 2012)
- ISSN：1530-6992
文摘
We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.