The dynamics of excited electrons and holes in single layer (SL) MoSb>2b> have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoSb>2b> on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoSb>2b>. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.