Probing the Nature of Defects in Graphene by Raman Spectroscopy

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• 作者：Axel Eckmann ; Alexandre Felten ; Artem Mishchenko ; Liam Britnell ; Ralph Krupke ; Kostya S. Novoselov ; Cinzia Casiraghi
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：August 8, 2012
• 年：2012
• 卷：12
• 期：8
• 页码：3925-3930
• 全文大小：316K
• 年卷期：v.12,no.8(August 8, 2012)
• ISSN：1530-6992

文摘

Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D鈥?peak is maximum (13) for sp³-defects, it decreases for vacancy-like defects (7), and it reaches a minimum for boundaries in graphite (3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.

Keywords:

Graphene; Raman spectroscopy; defects; conductive AFM