Aluminum oxide phospha
te
thin films have been deposi
ted via spin coa
ting from aqueous solu
tion andu
tilized as ga
te dielec
trics in
thin-film
transis
tors. Films are a
tomically smoo
th, dense, and amorphous,while exhibi
ting excellen
t morphological s
tabili
ty
to 1000
![](/images/en<font color=)
ti
ties/deg.gif">C. Film chemis
try and s
truc
ture are inves
tiga
tedby using an array of analy
tical
techniques including X-ray diffrac
tion, FT-IR spec
troscopy, and elec
tron-microprobe analysis. Dielec
tric film func
tionali
ty and quali
ty are explored
through in
tegra
tion in capaci
torand
thin-film
transis
tor devices. Film permi
ttivi
ty for an Al
2PO
5.5 composi
tion is found
to be 4.8 incombina
tion wi
th leakage curren
t densi
ties &l
t;10 nA cm
-2 a
t 1 MV cm
-1 and curren
t-limi
ted breakdownfields up
to 10 MV cm
-1. Thin-film
transis
tors fabrica
ted wi
th
these oxide phospha
te dielec
trics andspu
ttered ZnO channels exhibi
t s
trong field-effec
t and curren
t sa
tura
tion wi
th incremen
tal mobili
ties up
to 3.5 cm
2 V
-1 s
-1. The abili
ty of
the amorphous ma
trix
to accommoda
te addi
tional oxide componen
tsis demons
tra
ted by
the incorpora
tion of La
2O
3 and a resul
ting increase in film permi
ttivi
ty
to 8.5, whilemain
taining breakdown fields &g
t;4 MV cm
-1.