Quantitative Thermometry of Nanoscale Hot Spots
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- 作者：Fabian Menges ; Heike Riel ; Andreas Stemmer ; Bernd Gotsmann
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：February 8, 2012
- 年：2012
- 卷：12
- 期：2
- 页码：596-601
- 全文大小：359K
- 年卷期：v.12,no.2(February 8, 2012)
- ISSN：1530-6992
文摘
A method is described to quantify thermal conductance and temperature distributions with nanoscale resolution using scanning thermal microscopy. In the first step, the thermal resistance of the tip鈥搒urface contact is measured for each point of a surface. In the second step, the local temperature is determined from the difference between the measured heat flux for heat sources switched on and off. The method is demonstrated using self-heating of silicon nanowires. While a homogeneous nanowire shows a bell-shaped temperature profile, a nanowire diode exhibits a hot spot centered near the junction between two doped segments.