Osmium Atoms and Os2 Molecules Move Faster on Selenium-Doped Compared to Sulfur-Doped Boronic Graphenic Surfaces

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• 作者：Nicolas P. E. Barry ; Ana茂s Pitto-Barry ; Johanna Tran ; Simon E. F. Spencer ; Adam M. Johansen ; Ana M. Sanchez ; Andrew P. Dove ; Rachel K. O鈥橰eilly ; Robert J. Deeth ; Richard Beanland ; Peter J. Sadler
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：July 28, 2015
• 年：2015
• 卷：27
• 期：14
• 页码：5100-5105
• 全文大小：336K
• ISSN：1520-5002

文摘

We deposited Os atoms on S- and Se-doped boronic graphenic surfaces by electron bombardment of micelles containing 16e complexes [Os(p-cymene)(1,2-dicarba-closo-dodecarborane-1,2-diselenate/dithiolate)] encapsulated in a triblock copolymer. The surfaces were characterized by energy-dispersive X-ray (EDX) analysis and electron energy loss spectroscopy of energy filtered TEM (EFTEM). Os atoms moved ca. 26脳 faster on the B/Se surface compared to the B/S surface (233 卤 34 pm路sp>鈥?p> versus 8.9 卤 1.9 pm路sp>鈥?p>). Os atoms formed dimers with an average Os鈥揙s distance of 0.284 卤 0.077 nm on the B/Se surface and 0.243 卤 0.059 nm on B/S, close to that in metallic Os. The Os₂ molecules moved 0.83脳 and 0.65脳 more slowly than single Os atoms on B/S and B/Se surfaces, respectively, and again markedly faster (ca. 20脳) on the B/Se surface (151 卤 45 pm路sp>鈥?p> versus 7.4 卤 2.8 pm路sp>鈥?p>). Os atom motion did not follow Brownian motion and appears to involve anchoring sites, probably S and Se atoms. The ability to control the atomic motion of metal atoms and molecules on surfaces has potential for exploitation in nanodevices of the future.