Low-Lying Singlet and Triplet Electronic States of RhB
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  • 作者:Antonio Carlos Borin ; Joã ; o Paulo Gobbo
  • 刊名:Journal of Physical Chemistry A
  • 出版年:2008
  • 出版时间:May 8, 2008
  • 年:2008
  • 卷:112
  • 期:18
  • 页码:4394 - 4398
  • 全文大小:82K
  • 年卷期:v.112,no.18(May 8, 2008)
  • ISSN:1520-5215
文摘
The low-lying X1+, a3, A1, b3+, B1, c3, C1, D1+, E1, d3, and e3 electronic states of RhBhave been investigated at the ab initio level, using the multistate multiconfigurational second-order perturbation(MS-CASPT2) theory, with extended atomic basis sets and inclusion of scalar relativistic effects. Among theeleven electronic states included in this work, only three (the X1+, D1+, and E1 states) have beeninvestigated experimentally. Potential energy curves, spectroscopic constants, dipole moments, binding energies,and chemical bonding aspects are presented for all electronic states.

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