Influence of the Rotational Domain in the Growth of Transition Metal Clusters on Graphene

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• 作者：Antonio J. Mart铆nez-Galera ; Iv谩n Brihuega ; Jos茅 M. G贸mez-Rodr铆guez
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：February 19, 2015
• 年：2015
• 卷：119
• 期：7
• 页码：3572-3578
• 全文大小：480K
• ISSN：1932-7455

文摘

The influence of the relative orientation between graphene monolayers and the underlying substrate on the growth of transition metal clusters over epitaxial graphene on Ir(111) surfaces is investigated by scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV). This experimental study has been carried out for W and Ir clusters and, in both cases, the results revealed the existence of noticeable differences in the size and distribution of the clusters formed over areas where graphene and substrate lattices are aligned with respect to those grown on regions where both lattices present a relative rotation angle. In particular, while over aligned domains, in a consistent way with previous findings, the formation of ordered arrays of monodisperse clusters exhibiting a great structural perfection is observed, on the rotated ones it takes place the formation of larger size isolated clusters scattered around the surface. Moreover, the boundaries between different rotational domains are found to be decorated by these larger clusters. This disparity observed in the growth of clusters is explained in terms of the differences in the graphene鈥搒ubstrate interaction existing on aligned and rotated domains.