High Performance Multilayer MoS2 Transistors with Scandium Contacts

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• 作者：Saptarshi Das ; Hong-Yan Chen ; Ashish Verma Penumatcha ; Joerg Appenzeller
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：January 9, 2013
• 年：2013
• 卷：13
• 期：1
• 页码：100-105
• 全文大小：377K
• 年卷期：v.13,no.1(January 9, 2013)
• ISSN：1530-6992

文摘

While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS₂ layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS₂ flakes that are covered by a 15 nm Al₂O₃ film, high effective mobilities of 700 cm²/(V s) are achieved at room temperature. This breakthrough is largely attributed to the fact that we succeeded in eliminating contact resistance effects that limited the device performance in the past unrecognized. In fact, the apparent linear dependence of current on drain voltage had mislead researchers to believe that a truly Ohmic contact had already been achieved, a misconception that we also elucidate in the present article.

Keywords:

2-d semiconductor; layered dichalcogenide; MoS₂; field-effect transistor (FET); contact; mobility