Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion

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• 作者：Atindra Nath Pal ; Subhamoy Ghatak ; Vidya Kochat ; E. S. Sneha ; Arjun Sampathkumar ; Srinivasan Raghavan ; Arindam Ghosh
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：March 22, 2011
• 年：2011
• 卷：5
• 期：3
• 页码：2075-2081
• 全文大小：1004K
• 年卷期：0
• ISSN：1936-086X

文摘

A distinctive feature of single-layer graphene is the linearly dispersive energy bands, which in the case of multilayer graphene become parabolic. A simple electrical transport-based probe to differentiate between these two band structures will be immensely valuable, particularly when quantum Hall measurements are difficult, such as in chemically synthesized graphene nanoribbons. Here we show that the flicker noise, or the 1/f noise, in electrical resistance is a sensitive and robust probe to the band structure of graphene. At low temperatures, the dependence of noise magnitude on the carrier density was found to be opposite for the linear and parabolic bands. We explain our data with a comprehensive theoretical model that clarifies several puzzling issues concerning the microscopic origin of flicker noise in graphene field-effect transistors (GraFET).