Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz

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• 作者：Yu Cao ; Gerald J. Brady ; Hui Gui ; Chris Rutherglen ; Michael S. Arnold ; Chongwu Zhou
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：July 26, 2016
• 年：2016
• 卷：10
• 期：7
• 页码：6782-6790
• 全文大小：573K
• 年卷期：0
• ISSN：1936-086X

文摘

In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 kΩ·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (f_t) and the maximum oscillation frequency (f_max) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P_1dB) of 14 dBm and input third-order intercept point (IIP₃) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics.