Applications of Silicon-Bridged Oligothiophenes to Organic FET Materials

详细信息    查看全文

• 作者：Joji Ohshita ; Yuki Izumi ; Dong-Ha Kim ; Atsutaka Kunai ; Takao Kosuge ; Yoshihito Kunugi ; Akinobu Naka ; Mitsuo Ishikawa
• 刊名：Organometallics
• 出版年：2007
• 出版时间：December 3, 2007
• 年：2007
• 卷：26
• 期：25
• 页码：6150 - 6154
• 全文大小：203K
• 年卷期：v.26,no.25(December 3, 2007)
• ISSN：1520-6041

文摘

Trisilanylene-bridged oligothiophenes were synthesized, and their vapor-deposited and spin-coated filmswere examined as p-type semiconductors in field-effect transistors (FET). Of these, the best FETperformance was achieved by using tris[(ethylquinquethiophenyl)dimethylsilyl]methylsilane as the activematerial, whose field-effect mobility and on/off ratio were determined to be 6.4 × 10^-2 cm² V^-1 s^-1 and10⁴, respectively. Interestingly, the trisilanylene-bridged oligothiophenes were found to be photoactiveand the FET activity of the films was suppressed, when irradiated in air (254 nm), being potentiallyusable as patternable FET materials.