Graphene Flash Memory

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• 作者：Augustin J. Hong ; Emil B. Song ; Hyung Suk Yu ; Matthew J. Allen ; Jiyoung Kim ; Jesse D. Fowler ; Jonathan K. Wassei ; Youngju Park ; Yong Wang ; Jin Zou ; Richard B. Kaner ; Bruce H. Weiller ; Kang L. Wang
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：October 25, 2011
• 年：2011
• 卷：5
• 期：10
• 页码：7812-7817
• 全文大小：862K
• 年卷期：0
• ISSN：1936-086X

文摘

Graphene’s single atomic layer of sp² carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of graphene, such as high density of states, high work function, and low dimensionality. To this end, we have grown large-area graphene sheets by chemical vapor deposition and integrated them into a floating gate structure. GFM displays a wide memory window of ∼6 V at significantly low program/erase voltages of ±7 V. GFM also shows a long retention time of more than 10 years at room temperature. Additionally, simulations suggest that GFM suffers very little from cell-to-cell interference, potentially enabling scaling down far beyond current state-of-the-art flash memory devices.