Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires

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• 作者：J. Rodrigues ; M. F. Leit茫o ; J. F. C. Carreira ; N. Ben Sedrine ; N. F. Santos ; M. Felizardo ; T. Auzelle ; B. Daudin ; E. Alves ; A. J. Neves ; M. R. Correia ; F. M. Costa ; K. Lorenz ; T. Monteiro
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：August 6, 2015
• 年：2015
• 卷：119
• 期：31
• 页码：17954-17964
• 全文大小：857K
• ISSN：1932-7455

文摘

A detailed spectroscopic analysis of Eu³⁺ implanted and annealed GaN nanowires (NWs) and layers is presented by using temperature-dependent steady-state photoluminescence, room temperature photoluminescence excitation, and time-resolved photoluminescence. Independently of the used implantation angle and ion fluence, all the studied postimplant annealed samples evidence red ⁵D₀ 鈫?⁷F_J luminescence transitions of the Eu³⁺ (4f⁶) ions. One dominant Eu³⁺ optical center was found for both GaN NWs and layers, together with the presence of different overlapped Eu³⁺ minority optical centers. The thermal stability of the intra-4f⁶ lines was found to be higher for the NWs where the red emission is observed with the naked eye even at room temperature. Besides the lanthanide emission, the photoluminescence spectra of the NWs and layers exhibit a broad yellow luminescence band (YL) differing slightly in the spectral shape and peak position in the different samples. While the YL in the layers is commonly ascribed to a free to bound (e-A) or donor鈥揳cceptor pair (DAP) transitions, the recombination kinetics of the YL in the NWs supports a model for a surface-mediated recombination process.