详细信息    查看全文

• 作者：Lixia Li ; Dong Pan ; Yongzhou Xue ; Xiaolei Wang ; Miaoling Lin ; Dan Su ; Qinglin Zhang ; Xuezhe Yu ; Hyok So ; Dahai Wei ; Baoquan Sun ; Pingheng Tan ; Anlian PanJianhua Zhao
• 刊名：Nano Letters
• 出版年：2017
• 出版时间：February 8, 2017
• 年：2017
• 卷：17
• 期：2
• 页码：622-630
• 全文大小：731K
• ISSN：1530-6992

文摘

Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAsb>1–xb>Sbb>xb> nanowires by molecular-beam epitaxy. GaAsb>1–xb>Sbb>xb> nanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAsb>1–xb>Sbb>xb> nanowires with low Sb content can be grown directly on Si(111) substrates (0 ≤ x ≤ 0.60) and GaAs nanowire stems (0 ≤ x ≤ 0.50) by tuning the Sb and As fluxes. To obtain GaAsb>1–xb>Sbb>xb> nanowires with x ranging from 0.60 to 0.93, we grow the GaAsb>1–xb>Sbb>xb> nanowires on GaAs nanowire stems by tuning the As background. Photoluminescence measurements confirm that the emission wavelength of the GaAsb>1–xb>Sbb>xb> nanowires is tunable from 844 nm (GaAs) to 1760 nm (GaAsb>0.07b>Sbb>0.93b>). High-resolution transmission electron microscopy images show that the grown GaAsb>1–xb>Sbb>xb> nanowires have pure zinc-blende crystal structure. Room-temperature Raman spectra reveal a redshift of the optical phonons in the GaAsb>1–xb>Sbb>xb> nanowires with x increasing from 0 to 0.93. Field-effect transistors based on individual GaAsb>1–xb>Sbb>xb> nanowires are fabricated, and rectifying behavior is observed in devices with low Sb content, which disappears in devices with high Sb content. The successful growth of high-quality GaAsb>1–xb>Sbb>xb> nanowires with near full-range bandgap tuning may speed up the development of high-performance nanowire devices based on such ternaries.