Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films

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• 作者：S. Sampath Kumar ; E.J. Rubio ; M. Noor-A-Alam ; G. Martinez ; S. Manandhar ; V. Shutthanandan ; S. Thevuthasan ; C.V. Ramana
• 刊名：The Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：February 28, 2013
• 年：2013
• 卷：117
• 期：8
• 页码：4194-4200
• 全文大小：478K
• 年卷期：v.117,no.8(February 28, 2013)
• ISSN：1932-7455

文摘

Gallium oxide (Ga₂O₃) thin films were produced by sputter deposition by varying the substrate temperature (T_s) in a wide range (T_s = 25鈥?00 掳C). The structural characteristics and optical properties of Ga₂O₃ films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS), and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure, and morphology of Ga₂O₃ films. XRD and SEM analyses indicate that the Ga₂O₃ films grown at lower temperatures were amorphous, while those grown at T_s 鈮?500 掳C were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga₂O₃ films at T_s = 300鈥?00 掳C. The spectral transmission of the films increased with increasing temperature. The band gap of the films varied from 4.96 to 5.17 eV for a variation in T_s in the range 25鈥?00 掳C. A relationship between microstructure and optical property is discussed.