Solid鈥揝olution Semiconductor Nanowires in Pseudobinary Systems
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- 作者：Baodan Liu ; Yoshio Bando ; Lizhao Liu ; Jijun Zhao ; Mitome Masanori ; Xin Jiang ; Dmitri Golberg
- 刊名：Nano Letters
- 出版年：2013
- 出版时间：January 9, 2013
- 年：2013
- 卷：13
- 期：1
- 页码：85-90
- 全文大小：353K
- 年卷期：v.13,no.1(January 9, 2013)
- ISSN：1530-6992
文摘
Pseudobinary solid鈥搒olution semiconductor nanowires made of (GaP)1鈥?i>x(ZnS)x, (ZnS)1鈥?i>x(GaP)x and (GaN)1鈥?i>x(ZnO)x were synthesized based on an elaborative compositional, structural, and synthetic designs. Using analytical high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS), we confirmed that the structure uniformity and a lattice match between the two constituting binary components play the key roles in the formation of quaternary solid鈥搒olution nanostructures. Electrical transport measurements on individual GaP and (GaP)1鈥?i>x(ZnS)x nanowires indicated that a slight invasion of ZnS in the GaP host could lead to the abrupt resistance increase, resulting in the semiconductor-to-insulator transition. The method proposed here may be extended to the rational synthesis of many other multicomponent nanosystems with tunable and intriguing optoelectronic properties for specific applications.