Hot Electron Field Emission via Individually Transistor-Ballasted Carbon Nanotube Arrays
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- 作者：Chi Li ; Yan Zhang ; Matthew T. Cole ; Sai G. Shivareddy ; Jon S. Barnard ; Wei Lei ; Baoping Wang ; Didier Pribat ; Gehan A. J. Amaratunga ; William I. Milne
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：April 24, 2012
- 年：2012
- 卷：6
- 期：4
- 页码：3236-3242
- 全文大小：492K
- 年卷期：v.6,no.4(April 24, 2012)
- ISSN：1936-086X
文摘
We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source鈥揹rain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.