KBi
6.33S
10 andK
2Bi
8S
13 were synthesized bythe direct combination of K
2S/Bi
2S
3at hightemperature (>700
![](/images/entities/deg.gif)
C). The reaction ofK
2S/3.3Bi
2S
3 at 800
![](/images/entities/deg.gif)
C revealedthe presence of anew ternary sulfide KBi
6.33S
10 (
I,92% yield). The shiny, silver polycrystal
linematerialcrystal
lizes in the orthorhombic space group
Pnma (No. 62)with
a = 24.05(1) Å,
b =4.100(2) Å,
c = 19.44(1) Å,
V = 1917(3)Å
3,
Z = 4, and
dc =5.828 g/cm
3. Data with
Fo2 >3
![](/images/gifchars/sigma.gif)
(
Fo2),862; no. of variables 108, 2
max 50
![](/images/entities/deg.gif)
. The final
R/
Rw = 4.3/4.7%. Thestructure consists ofblocks of Bi
2Te
3- andCdI
2-type units that are connected to form athree-dimensional networkwith K
+ ions located in the channels that run along the
b axis. The same reaction but witha different reactant ratio at 750
![](/images/entities/deg.gif)
C gave the new ternary sulfideK
2Bi
8S
13 (
II, 94%yield).This compound crystal
lizes in the monoc
linic space group
P2
1/
m (No. 11) with
a =16.818(2)Å,
b = 4.074(5) Å,
c = 17.801(3)Å,
![](/images/gifchars/beta2.gif)
= 90.48(1)
![](/images/entities/deg.gif)
,
V = 1220(2)Å
3,
Z = 2, and
dc =5.900g/cm
3. Data with F
o2 >3
![](/images/gifchars/sigma.gif)
(
Fo2), 1924; no. ofvariables 131, 2
max 50
![](/images/entities/deg.gif)
. The final
R/
Rw =7.3/8.2%. The structure of the shiny rod
like crystals is closelyrelated to that of
I. As in I,it also consists of Bi
2Te
3- andCdI
2-type fragments that connect to formK
+-filled channels.The two potassium atoms and one bismuth atom are disordered overthree sites. Electricalconductivity on
I show semiconducting behavior with10
2 S/cm at 300 K. Compound
IIpossesses an electrical conductivity of 10
2 S/cm at 300 K.The optical bandgaps of
I and
II(0.06-0.24 eV) were estimated by infrared diffuse reflectancemeasurements. Thermalanalysis and thermal conductivity data for
I and
II are reported. The thermal conductivityof KBi
6.33S
10 is found to be substantiallylower than that of Bi
2Te
3.