Subnanometer Ga2O3 Tunnelling Layer by Atomic Layer Deposition to Achieve 1.1 V Open-Circuit Potential in Dye-Sensitized Solar Cells

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• 作者：Aravind Kumar Chandiran ; Nicolas Tetreault ; Robin Humphry-Baker ; Florian Kessler ; Etienne Baranoff ; Chenyi Yi ; Mohammad Khaja Nazeeruddin ; Michael Gr盲tzel
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：August 8, 2012
• 年：2012
• 卷：12
• 期：8
• 页码：3941-3947
• 全文大小：360K
• 年卷期：v.12,no.8(August 8, 2012)
• ISSN：1530-6992

文摘

Herein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The subnanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1 V with state-of-the-art organic D-蟺-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga₂O₃, the electron back reaction is reduced by more than an order of magnitude, while charge collection efficiency and fill factor are increased by 30% and 15%, respectively. The photogenerated exciton separation processes of electron injection into the TiO₂ conduction band and the hole injection into the electrolyte are characterized in detail.

Keywords:

Atomic layer deposition; dye-sensitized solar cell; gallium oxide; tunnelling layer; electron recombination