文摘
Designing new approaches to incorporate dopant impurities in semiconductor materials is essential in keeping pace with electronics miniaturization without device performance degradation. On the basis of a mild solution-phase synthetic approach to functionalize silica nanoparticles, we were able to graft tailor-made boron-molecular precursors and control the thermal release of boron in the silica framework. The molecular-level description of the surface structure lays the foundation for a structure鈥損roperty relationship approach, which is readily and successfully implemented to dope non-deglazed silicon wafers. As the method does not require an additional oxide capping step and shows minimal risk of carbon contamination, as demonstrated by compositional and electrical characterizations of the wafers, it is perfectly adapted to advanced microelectronics manufacturing processes.