Self-Assembled Incorporation of Modulated Block Copolymer Nanostructures in Phase-Change Memory for Switching Power Reduction

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• 作者：Woon Ik Park ; Byoung Kuk You ; Beom Ho Mun ; Hyeon Kook Seo ; Jeong Yong Lee ; Sumio Hosaka ; You Yin ; C. A. Ross ; Keon Jae Lee ; Yeon Sik Jung
• 刊名：ACS Nano
• 出版年：2013
• 出版时间：March 26, 2013
• 年：2013
• 卷：7
• 期：3
• 页码：2651-2658
• 全文大小：643K
• 年卷期：v.7,no.3(March 26, 2013)
• ISSN：1936-086X

文摘

Phase change memory (PCM), which exploits the phase change behavior of chalcogenide materials, affords tremendous advantages over conventional solid-state memory due to its nonvolatility, high speed, and scalability. However, high power consumption of PCM poses a critical challenge and has been the most significant obstacle to its widespread commercialization. Here, we present a novel approach based on the self-assembly of a block copolymer (BCP) to form a thin nanostructured SiO_x layer that locally blocks the contact between a heater electrode and a phase change material. The writing current is decreased 5-fold (corresponding to a power reduction by 1/20) as the occupying area fraction of SiO_x nanostructures is increased from a fill factor of 9.1% to 63.6%. Simulation results theoretically explain the current reduction mechanism by localized switching of BCP-blocked phase change materials.

Keywords:

block copolymers; self-assembly; phase change memory