Synthesis and Characterization of V-Doped β-In2S3 Thin Films on FTO Substrates

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• 作者：Cristina Tapia ; Sean P. Berglund ; Dennis Friedrich ; Thomas Dittrich ; Peter Bogdanoff ; Yang Liu ; Sergiu Levcenko ; Thomas Unold ; José Carlos ConesaAntonio L. De Lacey ; Marcos Pita ; Sebastian Fiechter
• 刊名：Journal of Physical Chemistry C
• 出版年：2016
• 出版时间：December 22, 2016
• 年：2016
• 卷：120
• 期：50
• 页码：28753-28761
• 全文大小：552K
• ISSN：1932-7455

文摘

Intermediate band semiconductors have raised interest as materials to both enhance photovoltaics’ efficiency and promote photocatalytic activity driven by visible light. The present work shows the synthesis of In₂S₃ doped with four different ratios of V using the ILGAR technique. This nebulize-spray based technique allows the deposition of In₂(V)S₃ thin layers controlling the layer thickness and providing high reliability on sample preparation. The samples have been characterized by X-ray diffraction, electron microscopy, profilometry, UV–vis spectroscopy, inductively coupled plasma mass spectrometry, X-ray photoemission spectroscopy, surface photovoltage spectroscopy, time-resolved microwave conductivity, photoelectrochemical, photoluminescence measurements, and electrochemical impedance spectroscopy. An optimum of 1.4% V content yielded the highest enhancement of photocurrent density compared to undoped In₂S₃. The results suggest that the inclusion of V in the In₂S₃ at 1.4% yields a high amount of in-gap levels within the crystalline structure that causes a Fermi energy level shift, which also induces the shift of the level of both valence and conduction bands.