Surface Doping and Band Gap Tunability in Hydrogenated Graphene

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• 作者：Bernard R. Matis ; James S. Burgess ; Felipe A. Bulat ; Adam L. Friedman ; Brian H. Houston ; Jeffrey W. Baldwin
• 刊名：ACS Nano
• 出版年：2012
• 出版时间：January 24, 2012
• 年：2012
• 卷：6
• 期：1
• 页码：17-22
• 全文大小：400K
• 年卷期：v.6,no.1(January 24, 2012)
• ISSN：1936-086X

文摘

We report the first observation of the n-type nature of hydrogenated graphene on SiO₂ and demonstrate the conversion of the majority carrier type from electrons to holes using surface doping. Density functional calculations indicate that the carrier type reversal is directly related to the magnitude of the hydrogenated graphene鈥檚 work function relative to the substrate, which decreases when adsorbates such as water are present. Additionally, we show by temperature-dependent electronic transport measurements that hydrogenating graphene induces a band gap and that in the moderate temperature regime [220鈥?75 K], the band gap has a maximum value at the charge neutrality point, is tunable with an electric field effect, and is higher for higher hydrogen coverage. The ability to control the majority charge carrier in hydrogenated graphene, in addition to opening a band gap, suggests potential for chemically modified graphene p鈥搉 junctions.

Keywords:

graphene; hydrogenated graphene; transport; band gap; majority charge carrier