Room-Temperature Polariton Lasing from GaN Nanowire Array Clad by Dielectric Microcavity

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• 作者：Junseok Heo ; Shafat Jahangir ; Bo Xiao ; Pallab Bhattacharya
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：June 12, 2013
• 年：2013
• 卷：13
• 期：6
• 页码：2376-2380
• 全文大小：334K
• 年卷期：v.13,no.6(June 12, 2013)
• ISSN：1530-6992

文摘

Room-temperature polariton lasing from a GaN-dielectric microcavity is demonstrated with optical excitation. The device is fabricated with a GaN nanowire array clad by Si₃N₄/SiO₂-distributed Bragg reflectors. The nanowire array is initially grown on silicon substrate by molecular beam epitaxy. A distinct nonlinearity in the lower polariton emission is observed at a threshold optical energy density of 625 nJ/cm², accompanied by significant line width narrowing to 5 meV and a small blue shift of 1 meV. The measured polariton dispersion is characterized by a Rabi splitting of 40 meV and a cavity exciton detuning of 鈭?7 meV. The device described here is a demonstration of exciton鈥損hoton strong coupling phenomenon in an array of light emitters and paves the way for the realization of a room temperature electrically injected polariton laser.

Keywords:

Nanowires; exciton-polariton; microcavity; lasing