Fabrication of ZnO Thin Films from Nanocrystal Inks

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• 作者：Anthony J. Morfa ; Gary Beane ; Benjamin Mashford ; Birendra Singh ; Enrico Della Gaspera ; Alex Martucci ; Paul Mulvaney
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：November 25, 2010
• 年：2010
• 卷：114
• 期：46
• 页码：19815-19821
• 全文大小：303K
• 年卷期：v.114,no.46(November 25, 2010)
• ISSN：1932-7455

文摘

Zinc oxide nanocrystals were prepared in ethanol and spin-cast to form semiconductor nanocrystal thin films that were thermally annealed at temperatures between 100 and 800 °C. Particle size, monodispersity, and film porosity were determined by X-ray diffraction, ultraviolet−visible absorption spectroscopy, and spectroscopic ellipsometry, respectively. Film porosity rapidly decreased above 400 °C, from 32% to 26%, which coincided with a change in electronic properties. Above 400 °C, the ZnO electron mobility, determined from FET transfer characteristics, increased from 10⁻³ to 10⁻¹ cm² V s⁻¹, while the surface resistivity, determined from electrical impedance, decreased from 10⁷ to 10³ Ω m over the same temperature range. Below the densification point, nanoparticle core resistivity was found to increase from 10⁴ to 10⁶ Ω m, which is caused by the increasing polydispersity in the quantized energy levels of the nanocrystals. From 100 to 800 °C, crystallite size was found to increase from 5 to 18 nm in diameter. The surface resistance was decreased dramatically by passivation with butane thiol.