Influence of Substrate Surface Chemistry on the Performance of Top-Gate Organic Thin-Film Transistors

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• 作者：Damien Boudinet ; Mohammed Benwadih ; St茅phane Altazin ; Jean-Marie Verilhac ; Eric De Vito ; Christophe Serbutoviez ; Gilles Horowitz ; Antonio Facchetti
• 刊名：Journal of the American Chemical Society
• 出版年：2011
• 出版时间：July 6, 2011
• 年：2011
• 卷：133
• 期：26
• 页码：9968-9971
• 全文大小：777K
• 年卷期：v.133,no.26(July 6, 2011)
• ISSN：1520-5126

文摘

Organic thin-film transistor (OTFT) performance depends on the chemical characteristics of the interface between functional semiconductor/dielectric/conductor materials. Here we report for the first time that OTFT response in top-gate architectures strongly depends on the substrate chemical functionalization. Depending on the nature of the substrate surface, dramatic variations and opposite trends of the TFT threshold voltage (卤50 V) and OFF current (10⁵脳!) are observed for both p- and n-channel semiconductors. However, the field-effect mobility varies only marginally (2脳). Our results demonstrate that the substrate is not a mere passive mechanical support.